Mfg Part Number: CY7C261-45WMB
Alternate P/N: CY7C26145WMB
NSN : 5962-01-279-3738
NIIN : 012793738
CAGE Code : FAH01
Manufacturer: 2 Mb Distribution
Item Name : Microcircuit Memory Microcircuit Memory
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NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-279-3738 Item Description: Microcircuit Memory | 5962 | 012793738 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
Cy7c261-45wmb | 2 | 2 | 3 |
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 1.230 INCHES MINIMUM AND 1.280 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.245 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.175 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 660.0 MILLIWATTS |
AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | MONOLITHIC AND PROGRAMMABLE AND HIGH SPEED |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 14 INPUT |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
CZEQ | TIME RATING PER CHACTERISTIC | 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
CZER | MEMORY DEVICE TYPE | ROM |
TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
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