Mfg Part Number: 91L02DM-B
Alternate P/N: 91L02DMB
NSN : 5962-01-043-6195
NIIN : 010436195
CAGE Code : 34335
Manufacturer: Advanced Micro Devices Inc
Item Name : Microcircuit Memory Microcircuit Memory
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NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-043-6195 Item Description: MICROCIRCUIT,MEMORY | 5962 | 010436195 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | U | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
AM91L02DM-B | 3 | 9 | 3 |
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 0.770 INCHES MINIMUM AND 0.808 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.278 INCHES MINIMUM AND 0.298 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.085 INCHES MINIMUM AND 0.124 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 260.0 MILLIWATTS |
AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/ENABLE AND LOW POWER AND W/STORAGE AND W/DECODED OUTPUT |
CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 13 INPUT |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
CZEQ | TIME RATING PER CHACTERISTIC | 200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
CZER | MEMORY DEVICE TYPE | RAM |
CZZZ | MEMORY CAPACITY | UNKNOWN |
TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
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