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Instant Quote for NSN Part 202104-007 of Bae Systems Information And Electronic Systems Integration I

Mfg Part Number: 202104-007

Alternate P/N: 202104007

NSN : 5962-01-262-2185

NIIN : 012622185

CAGE Code : 81413

Manufacturer: Bae Systems Information And Electronic Systems Integration I

Item Name : Microcircuit Memory Microcircuit Memory

FSC : 5962 Microcircuits Electronic

An NSN is a 13-digit numeric code that serves to identify 'standardized material items of supply' as they have been recognized by all NATO countries and the United States Department of Defense. Aerospace Sphere, owned and operated by ASAP Semiconductor, is an all-inclusive purchasing platform for hard-to-find and in-demand parts and components pertaining to the civil aviation, defense, aerospace, industrial, and electronic markets. As such, we have an inventory of more than two billion new and obsolete parts, among which is an unparalleled selection of NSN parts and much more. This includes items such as Microcircuit Memory 202104-007 from manufacturer Bae Systems Information And Electronic Systems Integration I and many more, all of which are available with short lead times and competitive prices. For NSN parts and part numbers like 202104-007, you won’t find a more inclusive source than Aerospace Sphere.

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NSN Information for Part Number 202104-007 with NSN 5962-01-262-2185, 5962012622185

NSN	FSC	NIIN	CLS	Hazmat	DEMIL	Cancelled NSN
5962-01-262-2185 Item Description: Microcircuit Memory	5962	012622185	0	N	D
	CIIC	HCC	ESD	PMIC	Criticality	ENAC
	U		D	A	0
Part Number	ISC	RNVC	RNCC	HCC	MSDS	SADC
202104-007	1	8	E

Characteristics Data of NSN 5962-01-262-2185, 5962012622185

MRC	Criteria	Characteristic
MEMORY	ADAQ	BODY LENGTH0 840 INCHES MAXIMUM
MEMORY	ADAT	BODY WIDTH0 220 INCHES MINIMUM AND 0 310 INCHES MAXIMUM
MEMORY	ADAU	BODY HEIGHT0 140 INCHES MINIMUM AND 0 185 INCHES MAXIMUM
MEMORY	AEHX	MAXIMUM POWER DISSIPATION RATING794 0 MILLIWATTS
MEMORY	AFGA	OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS
MEMORY	AFJQ	STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS
MEMORY	CBBL	FEATURES PROVIDEDHERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND SCHOTTKY AND 3-STATE OUTPUT
MEMORY	CQSJ	INCLOSURE MATERIALCERAMIC
MEMORY	CQSZ	INCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORY	CQWX	OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC
MEMORY	CQZP	INPUT CIRCUIT PATTERN10 INPUT
MEMORY	CTFT	CASE OUTLINE SOURCE AND DESIGNATORD-2 MIL-M-38510
MEMORY	CWSG	TERMINAL SURFACE TREATMENTSOLDER
MEMORY	CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 5 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE
MEMORY	CZEQ	TIME RATING PER CHACTERISTIC85 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 85 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT
MEMORY	CZER	MEMORY DEVICE TYPEPROM
MEMORY	CZZZ	MEMORY CAPACITYUNKNOWN
MEMORY	TEST	TEST DATA DOCUMENT81349-MIL-M-38510 SPECIFICATION INCLUDES ENGINEERING TYPE BULLETINS BROCHURESETC THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT EXCLUDES COMMERCIAL CATALOGS INDUSTRY DIRECTORIES AND SIMILAR TRADE PUBLICATIONS REFLECTI
MEMORY	TTQY	TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT
MEMORY	ZZZK	SPECIFICATIONSTANDARD DATA81349-MIL-M-38510204 GOVERNMENT SPECIFICATION

Related NSN Part List to 202104-007

202.000 7A	202.000 750MA PBF	202.000 750MA	202.000 630MA PBF
202.000 50MA	202.000 500MA PBF	202.000 4A PBF	202.000 400MA
202.000 3A	202.000 315MA PBF	202.000 2A PBF	202.000 250MA PBF
202.000 20A PBF	202.000 200MA	202.000 1A PBF	202.000 1A
202.000 16A PBF	202.000 16A	202.000 160MA	202.000 10A PBF
202.000 100MA PBF	202-000	202-00-401	202 00 25 112 002
202-0-R47-10-2W	202-0 R47 10	202-0-4K7-10	202 0.40HM1B
202 0.40H	202-0.10HM-5-T	202 0 1 10	202-0