Mfg Part Number: 5962-9051002XB
Alternate P/N: 59629051002XB
NSN : 5962-01-378-8200
NIIN : 013788200
CAGE Code : 67268
Manufacturer: Dla Land And Maritime
Item Name : Microcircuit Memory Microcircuit Memory
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NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-378-8200 Item Description: Microcircuit Memory | 5962 | 013788200 | 0 | N | D | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
7 | D | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
5962-9051002xb | 2 | 9 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
CZER | Memory Device Type | EEPROM |
CTQX | Current Rating Per Characteristic | 20.00 MILLIAMPERES MAXIMUM SUPPLY |
CZEQ | Time Rating Per Chacteristic | 442.00 NANOSECONDS MAXIMUM ACCESS |
TEST | Test Data Document | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
AFJQ | Storage Temp Range | -65.0 TO 150.0 DEG CELSIUS |
CQZP | Input Circuit Pattern | 31 INPUT |
CQSJ | Inclosure Material | CERAMIC |
ADAT | Body Width | 0.510 INCHES MINIMUM AND 0.620 INCHES MAXIMUM |
MRC | Decoded Requirement | Clear Text Reply |
CBBL | Features Provided | W/CLOCK AND W/ENABLE AND W/DISABLE AND HIGH IMPEDANCE AND 3-STATE OUTPUT |
ADAQ | Body Length | 2.435 INCHES MAXIMUM |
TTQY | Terminal Type And Quantity | 48 PRINTED CIRCUIT |
AEHX | Maximum Power Dissipation Rating | 210.0 MILLIWATTS |
ADAU | Body Height | 0.210 INCHES MAXIMUM |
CZEN | Voltage Rating And Type Per Characteristic | -0.3 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
CTFT | Case Outline Source And Designator | D-14 MIL-M-38510 |
CQSZ | Inclosure Configuration | DUAL-IN-LINE |
CXCY | Part Name Assigned By Controlling Agency | MICROCONTROLLER, ROM DISABLED, 256 BYTES RAM, 512 BYTES EEPROM |
AFGA | Operating Temp Range | -55.0 TO 125.0 DEG CELSIUS |
CZEP | Capitance Rating Per Characteristic | 14.00 INPUT PICOFARADS MAXIMUM |
CWSG | Terminal Surface Treatment | SOLDER |
CQWX | Output Logic Form | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC AND HI-PERFORMANCE MOS |
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