Mfg Part Number: R0-3-2513-001
Alternate P/N: R032513001
NSN : 5962-01-081-4889
NIIN : 010814889
CAGE Code : 14936
Manufacturer: General Semiconductor Inc
Item Name : Microcircuit Memory Microcircuit Memory
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NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-081-4889 Item Description: Microcircuit Memory | 5962 | 010814889 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
R0-3-2513-001 | 1 | 9 | 3 |
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 1.240 INCHES MINIMUM AND 1.255 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.545 INCHES MINIMUM AND 0.555 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.145 INCHES MINIMUM AND 0.155 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 175.0 MILLIWATTS |
AFGA | OPERATING TEMP RANGE | +0.0/+70.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | MONOLITHIC AND HIGH SPEED AND W/ENABLE AND W/BUFFERED OUTPUT AND POSITIVE OUTPUTS AND W/DECODED OUTPUT AND PROGRAMMED AND PROGRAMMABLE AND 3-STATE OUTPUT |
CQSJ | INCLOSURE MATERIAL | PLASTIC |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 8.0 VOLTS MAXIMUM POWER SOURCE |
CZEQ | TIME RATING PER CHACTERISTIC | 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT |
CZER | MEMORY DEVICE TYPE | ROM |
CZZZ | MEMORY CAPACITY | UNKNOWN |
TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
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