Mfg Part Number: 1818-0319
Alternate P/N: 18180319
NSN : 5962-01-151-2860
NIIN : 011512860
CAGE Code : 28480
Manufacturer: Hewlett Packard Inc
Item Name : Microcircuit Memory Microcircuit Memory
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NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-151-2860 Item Description: Microcircuit Memory | 5962 | 011512860 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | A | 0 | ||||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
1818-0319 | 3 | 2 | 3 |
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH1 090 INCHES MINIMUM AND 1 120 INCHES MAXIMUM |
MEMORY | ADAT | BODY WIDTH0 340 INCHES MINIMUM AND 0 360 INCHES MAXIMUM |
MEMORY | ADAU | BODY HEIGHT0 145 INCHES MINIMUM AND 0 155 INCHES MAXIMUM |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 0 WATTS |
MEMORY | AFGA | OPERATING TEMP RANGE-0 070 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
MEMORY | AGAV | END ITEM IDENTIFICATION4935-01-123-1278 GENERATORPULSE |
MEMORY | CBBL | FEATURES PROVIDEDLOW POWER AND 3-STATE OUTPUT AND HIGH PERFORMANCE |
MEMORY | CQSJ | INCLOSURE MATERIALPLASTIC |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN16 INPUT |
MEMORY | CRHL | BIT QUANTITY1024 |
MEMORY | CSWJ | WORD QUANTITY256 |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 3 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZEQ | TIME RATING PER CHACTERISTIC650 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT |
MEMORY | CZER | MEMORY DEVICE TYPERAM |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY22 PRINTED CIRCUIT |
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