Mfg Part Number: G286466-1
Alternate P/N: G2864661
NSN : 5962-01-211-4664
NIIN : 012114664
CAGE Code : 54X10
Manufacturer: Raytheon Company
Item Name : Microcircuit Memory Microcircuit Memory
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NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-211-4664 Item Description: Microcircuit Memory | 5962 | 012114664 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
7 | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
G286466-1 | 5 | 2 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 1.000 INCHES NOMINAL |
ADAT | BODY WIDTH | 0.310 INCHES NOMINAL |
ADAU | BODY HEIGHT | 0.098 INCHES NOMINAL |
AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
AGAV | END ITEM IDENTIFICATION | AIRCRAFT, F-16;AIRCRAFT, GALAXY C-5; SUPPORT EQUIPMENT, B-1 AIRCRAFT, BALLISTIC MISSILE EARLY WARNING STS (BMEWS); PAVE PHASED ARRAY WARNING SYSTEM (PAWS); AIRCRAFT, STRATOLIFTER C-135; OVER THE HORIZON BACK SCANNER (OTH-B) PROGRAM (AN/FPS- |
CBBL | FEATURES PROVIDED | HIGH PERFORMANCE AND STATIC OPERATION AND 3-STATE OUTPUT |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 18 INPUT |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM POWER SOURCE |
CZER | MEMORY DEVICE TYPE | RAM |
TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
TTQY | TERMINAL TYPE AND QUANTITY | 20 PRINTED CIRCUIT |
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