Mfg Part Number: V510-00018-1
Alternate P/N: V510000181
NSN : 5962-01-241-3168
NIIN : 012413168
CAGE Code : 82577
Manufacturer: Raytheon Company
Item Name : Microcircuit Memory Microcircuit Memory
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MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH0 870 INCHES MINIMUM AND 0 920 INCHES MAXIMUM |
MEMORY | ADAT | BODY WIDTH0 280 INCHES MINIMUM AND 0 310 INCHES MAXIMUM |
MEMORY | ADAU | BODY HEIGHT0 160 INCHES MAXIMUM |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 0 WATTS |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDWENABLE AND HERMETICALLY SEALED AND BURN IN AND ELECTROSTATIC SENSITIVE |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC AND GLASS |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN16 INPUT |
MEMORY | CRHL | BIT QUANTITY4096 |
MEMORY | CSWJ | WORD QUANTITY1024 |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZER | MEMORY DEVICE TYPERAM |
MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY18 PRINTED CIRCUIT |
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