Mfg Part Number: MD102D20100S
NSN : 5962-01-228-0135
NIIN : 012280135
CAGE Code : K0268
Manufacturer: Raytheon Systems Ltd
Item Name : Microcircuit Memory Microcircuit Memory
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NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-228-0135 Item Description: Microcircuit Memory | 5962 | 012280135 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
Md102d20100s | 3 | 1 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH2 030 INCHES MINIMUM AND 2 080 INCHES MAXIMUM |
MEMORY | ADAT | BODY WIDTH0 515 INCHES MINIMUM AND 0 600 INCHES MAXIMUM |
MEMORY | ADAU | BODY HEIGHT0 140 INCHES MINIMUM AND 0 185 INCHES MAXIMUM |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 5 WATTS |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDHIGH PERFORMANCE AND WENABLE AND WRESET AND HERMETICALLY SEALED |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN35 INPUT |
MEMORY | CRHL | BIT QUANTITY2048 |
MEMORY | CSWJ | WORD QUANTITY256 |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZER | MEMORY DEVICE TYPERAM |
MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY40 PRINTED CIRCUIT |
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